Edge emission type light emitting element
文献类型：专利
| 作者 | HAYAMIZU KAZUYUKI; SEKII HIROSHI |
| 发表日期 | 1992-08-06 |
| 专利号 | JP1992215482A |
| 著作权人 | OMRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Edge emission type light emitting element |
| 英文摘要 | PURPOSE:To reduce an ohmic resistance and to simplify a manufacturing process. CONSTITUTION:After a lower clad layer 12, an active layer 13, an upper clad layer 14, a first conductivity type (e.g. a p-type) semiconductor layer 15 and a second conductivity type (n-type) semiconductor layer 16 are grown on a substrate 11, a V-shaped groove 17 is formed. Ohmic electrodes 18, 19 are respectively formed on the lower surface of the substrate 11 and the surface of the groove 17, the upper surface of the layer 16. The layers 15, 16 form a p-n junction current blocking layer, and a current is blocked by its reverse withstand voltage characteristic. The current flows only at the groove 17, thereby realizing a current narrowing structure. |
| 公开日期 | 1992-08-06 |
| 申请日期 | 1990-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORP |
| 推荐引用方式 GB/T 7714 | HAYAMIZU KAZUYUKI,SEKII HIROSHI. Edge emission type light emitting element. JP1992215482A. 1992-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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