Liquid phase epitaxial growing device
文献类型：专利
| 作者 | YOSHIKAWA MITSUO; ITOU MICHIHARU; MARUYAMA KENJI; TAKIGAWA HIROSHI |
| 发表日期 | 1983-08-16 |
| 专利号 | JP1983138038A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growing device |
| 英文摘要 | PURPOSE:To offer a growing device which can obtain an Hg1-xCdxTe crystal layer wherein Hg which is an easy evaporation constituent is contained in a fixed amount with good reproducibility, by regulating the flow so that the evaporation constituent from the vessel containing the easy evaporation constituent passes over a slide member. CONSTITUTION:The Hg vapor evaporated from the easy evaporation Hg contained in the vessel 8 provided in the upper stream side of gas does not pass through the lower part of a support base 1 resulting in emission to the outside by providing a partition member 21, while the vapor flow is regulated in the direction shown by the dot line B and flows. Thereby, the upper part of a liquid reservoir 5 wherein the Hg1-xCdxTe material 6 is contained becomes filled with the easy evaporation Hg vapor, and then the vapor pressure of the easy evaporation Hg in a reaction tube and the dissociation pressure of the easy evaporation Hg in the Hg1-xCdxTe liquid phase 6 in the liquid reservoir 5 reach apporox. an equilibrium state. Therefore, the composition of the liquid phase 6 does not vary, and accordingly the Hg1-xCdxTe epitaxial srystal layer of stable composition can be obtained. |
| 公开日期 | 1983-08-16 |
| 申请日期 | 1982-02-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64546]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA MITSUO,ITOU MICHIHARU,MARUYAMA KENJI,et al. Liquid phase epitaxial growing device. JP1983138038A. 1983-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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