Manufacture of quantum well semiconductor laser
文献类型：专利
| 作者 | FUJIMOTO AKIRA |
| 发表日期 | 1986-11-18 |
| 专利号 | JP1986260695A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of quantum well semiconductor laser |
| 英文摘要 | PURPOSE:To form an active region having two-dimensional quantum well structure, in which injected carriers are confined in one-dimensional space, by selectively etching an active region having thin-film multilayer quantum well structure, in which a quantum well layer and a barrier layer are shaped in a laminating manner, from the direction of a side surface. CONSTITUTION:An n-type GaAlAs confinement layer 2, thin-film multilayer quantum well structure 3A, in which GaAlAs barrier layers 3b and GaAs quantum well layers 3a are laminated alternately, and a p-type GaAlAs confinement layer 4 are formed onto an n-type GaAs substrate 1 in succession. The growth layers 2, 3A, 4 on the substrate 1 are processed to a mesa shape in width of W1, and dipped in a selective etching liquid through which the quantum well layers 3a consisting of GaAs are etched but the GaAlAs layers 3b are not etched, and only the well layers 3a are etched up to width of W2. n-type GaAlAs confinement layers 5 are grown on both side surfaces of a wafer having quantum well structure in which the GaAlAs barrier layers 3b are left in a pectinate manner. The barrier layer 3b sections are dissolved into a growth solution at that time. The n-type GaAlAs confinement layers 5 are shaped on both side surfaces of quantum well structure 3, and an electrode is formed. |
| 公开日期 | 1986-11-18 |
| 申请日期 | 1985-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | FUJIMOTO AKIRA. Manufacture of quantum well semiconductor laser. JP1986260695A. 1986-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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