Optical-electronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | HASUMI YUJI; TENMIYO JIRO; ASAHI HAJIME; KOUMAE ATSUO |
| 发表日期 | 1987-11-17 |
| 专利号 | JP1987264660A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical-electronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain an optical-electronic device by a method wherein AlxGa1-xAs is superposed with a composition ratio (x) selected on a semi-insulative GaAs substrate, an nnnn multilayer epitaxial film is provided, further an (n) layer is provided with (z) of AlzGa1-zAs selected likewise in (n) and (p) films and a (p) layer, and element isolation is made by a p+ layer. CONSTITUTION:N-AlxGa1-xAs 2, an GaAs active layer 3 and n-AlxGa1-xAs 4 are superposed on semi-insulative GaAs 1 to construct a horizontal junction fringe laser, and n-GaAs is superposed thereon. Moreover, n-AlzGa1-zAs 6 and p-GaAs 7 are formed epitaxially, an (n) layer 8 is formed in the (p) layer 7, and thereby a collector C is formed. The layers 7 and 6 are removed by etching with the layer 8 for the collector C and a base B left behind, and then an emitter electrode E is provided on a connecting layer 5. Next, a p diffused layer 9 extending to the substrate 1 is provided, H ions are implanted 11 for element isolation, and electrodes P and N are attached onto the layers 9 and 10. When the electrodes P and N are electrified, the layer 3 emits a light. According to this construction, the concentration of the active layer of a laser diode LD and the concentration of the base of a hetero junction bipolar element HBT can be set separately, and LD having a low threshold value and HBT having a high cut-off frequency are obtained on the same substrate. |
| 公开日期 | 1987-11-17 |
| 申请日期 | 1986-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64558]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | HASUMI YUJI,TENMIYO JIRO,ASAHI HAJIME,et al. Optical-electronic integrated circuit and manufacture thereof. JP1987264660A. 1987-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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