Semiconductor laser device and semiconductor laser apparatus having it included
文献类型：专利
| 作者 | NAKAJIMA KEIICHI |
| 发表日期 | 1986-11-28 |
| 专利号 | JP1986269390A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and semiconductor laser apparatus having it included |
| 英文摘要 | PURPOSE:To increase the assembling yield of semiconductor laser devices, by forming marks on positions on the surface of the laser device corresponding to the optical waveguide path. CONSTITUTION:On a substrate 2, a buffer layer 3, clad layer 4, active layer 5, clad layer 6 and cap layer 7 are sequentially laminated, and a V-shaped cross sectional channel 8 is formed across the buffer layer 3 and the substrate 2. The active layer 5 positioning just above the channel 8 is employed as an optical waveguide path 9. In a laser device so constituted, on the surface of an electrode formed on the cap layer 7, marks 12 corresponding to the optical waveguide path 9 are formed and utilized when the electrode is wire-bonded to a laser chip. That is, on bonding, wire 23 is connected to a position far from the marks 12, by utilizing the marks 12 as an aim, so that shock on bonding can not be applied to the optical waveguide path 9. |
| 公开日期 | 1986-11-28 |
| 申请日期 | 1985-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64567]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKAJIMA KEIICHI. Semiconductor laser device and semiconductor laser apparatus having it included. JP1986269390A. 1986-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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