Manufacture of iii-v compound semiconductor optical waveguide element with embedded structure
文献类型：专利
| 作者 | OMORI YUTAKA; TATE AKIYUKI; KOBAYASHI MORIO |
| 发表日期 | 1988-12-27 |
| 专利号 | JP1988318791A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of iii-v compound semiconductor optical waveguide element with embedded structure |
| 英文摘要 | PURPOSE:To make it possible to manufacture a III-V compound semiconductor optical guide element having an arbitrary fine embedded structure only with one crystalline growth by a method wherein a stripe-shaped projecting section having a vertical sidewall with a specific plane orientation is formed on the surface of a specific plane orientation of substrate, and an optical guide layer and a clad layer is epitaxially grown on it. CONSTITUTION:A stripe-shaped projecting section having a vertical sidewall with plane orientation equivalent to the crystallographical plane orientation a face 01-1 and a face 0-11 or the face 01-1 and the face 0-11 is formed on the crystallographical plane orientation, a face 100 or a plane equivalent to the face 100 on a substrate 1 mainly consisting of III-V compound. Then, in a vapor phase or vacuum, at least, a crystalline layer mainly consisting of III-V compound to be an optical guide layer 3 and a crystalline layer mainly consisting of III-V compound to be a clad layers 2, 3 are epitaxially grown on the said plane. For example, after said stripe is formed on an n-type 100 plane GaAs substrate crystal 1, an n-AlGaAs lower clad layer 2, the GaAs optical guide layer 3, and the p-AlGaAs upper clad layer 4 are formed. |
| 公开日期 | 1988-12-27 |
| 申请日期 | 1987-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OMORI YUTAKA,TATE AKIYUKI,KOBAYASHI MORIO. Manufacture of iii-v compound semiconductor optical waveguide element with embedded structure. JP1988318791A. 1988-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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