Liquid phase epitaxially growing device
文献类型：专利
| 作者 | AIKI KUNIO; FUNAKOSHI KIYOHIKO; KOUNO TOSHIHIRO; DOI KOUNEN; ITOU RIYOUICHI |
| 发表日期 | 1982-08-09 |
| 专利号 | JP1982128025A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxially growing device |
| 英文摘要 | PURPOSE:To grow a crystal of high quality by disposing a substrate crystal on a low temperature region to thermally decompose and remove an impurity such as surface oxide or the like, thereby preventing the thermal damage of the crystalline surface of the substrate. CONSTITUTION:The prescribed solution, additive and crystalline substrate are mounted in a growing system, and a growing jig 3 mounted with a substrate crystal 4 and aluminums 5-7 is placed out of a furnace On the other hand, the parts of Ga solutions 8-10 are heated at the prescribed temperature for 2hr. After the growing temperature is cooled to 760 deg.C, the jig 3 is moved, and a jig 15 and the jig 3 are integrated so that the aluminums 5-7 are disposed under a hole becoming a solution tank of the jig 15. Subsequently, a growing jig 14 is moved, GaAs, Al are mixed with Ga solvent, thereby preparing final GaAlAs grown solutions 8'-10'. The jig 3 is moved while ordinarily cooling the furnace at the prescribed temperature decreasing rate, while the substrate crystal 4 is sequentially contacted with the solutions 8'-10', thereby growing the crystal. |
| 公开日期 | 1982-08-09 |
| 申请日期 | 1981-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | AIKI KUNIO,FUNAKOSHI KIYOHIKO,KOUNO TOSHIHIRO,et al. Liquid phase epitaxially growing device. JP1982128025A. 1982-08-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。