Semiconductor laser and manufacture of same
文献类型：专利
| 作者 | KOBAYASHI NOBUO; HASHIMOTO AKIHIRO; KAMIJO TAKESHI; WATANABE NOZOMI |
| 发表日期 | 1988-06-04 |
| 专利号 | JP1988132494A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture of same |
| 英文摘要 | PURPOSE:To easily accomplish the collection of a laser light by making the guide layer part above the stripe-wise current injection part between the internal current constriction layers project to the ground side, and making the cross-sectional shape parallel with the light emitting end face of the projecting part into a rectangle, thereby obtaining a high output. CONSTITUTION:On a compound semiconductor ground 51, internal current constriction layers 53, a lower clad layer 59, a guide layer 61, an active layer 63 and an upper clad layer 65 are provided. At that time, the surface of the side of the guide layer 61 in contact with the active layer 63 is made a planer surface. The part of the guide layer 61 above and corresponding to a striped current injection part 55 between the narrowing layers 53 is made to project to the substrate 51 side. The light emitting end face and a parallel cross section of a projecting part 61a are practically of rectangular shapes. Whereupon, since the light emitted at the active layer 63 oozes out into the guide layer 61, the light emitting area is widened. With this, a high output is obtained, and the collection of a laser light is easily accomplished. |
| 公开日期 | 1988-06-04 |
| 申请日期 | 1986-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI NOBUO,HASHIMOTO AKIHIRO,KAMIJO TAKESHI,et al. Semiconductor laser and manufacture of same. JP1988132494A. 1988-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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