Manufacture of distributed bragg reflection type semiconductor laser
文献类型：专利
| 作者 | TOMORI YUICHI; OISHI MAMORU |
| 发表日期 | 1989-01-26 |
| 专利号 | JP1989023591A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distributed bragg reflection type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a distributed Bragg reflection type semiconductor laser having high performance by so bonding an active waveguide layer made of a vapor epitaxial method and a nonactive waveguide layer formed with a diffraction grating of uniform depth at the top as to abut against the layers to optically match the layers. CONSTITUTION:An active waveguide layer 2 made of InGaAsP and a protective layer 3 made of InP are sequentially laminated, for example, by a liquid epitaxial method over the whole surface of an N-type InP substrate Then, an SiO2 mask 4 is formed, for example, by a sputtering method and a photolithography method on the layer 3. The unnecessary parts of the layers 2, 3 are removed by the mask 4 and a chemically etching method to form a stripe- like region. Then, with the mask 4 as a selectively growing mask a nonactive waveguide layer 6 made of non-doped InGaAsP is formed by an organic metal vapor growing method only on a region except the stripe-like region. Then, after the mask 4 is removed, for example, by a dry etching method, a diffraction grating 6 is formed by a double luminous flux interference exposing method and chemical etching on the whole surface of the layers 3, 5. |
| 公开日期 | 1989-01-26 |
| 申请日期 | 1987-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64584]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | TOMORI YUICHI,OISHI MAMORU. Manufacture of distributed bragg reflection type semiconductor laser. JP1989023591A. 1989-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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