Buried heterostructure semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | NOJIRI HIDEAKI |
| 发表日期 | 1991-05-22 |
| 专利号 | JP1991119777A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried heterostructure semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To easily form an element and to enhance a light-emitting efficiency by a method wherein an undoped GaAs layer is included in a superlattice layer which is situated at the upper part of a GaAs substrate and at the lower part of an active layer. CONSTITUTION:A buffer layer 10, a clad layer 102a, a superlattice layer 11 composed of GaAs/Ga0.7Al0.3As are formed on an n-type GaAs substrate 101 by using a molecular beam epitaxial(MBE) method. In succession, a clad layer 102b, an active layer 12, a clad layer 104 and a cap layer 105 are formed one after another; a first growth operation is finished. Then, a selective etching operation is executed by using a prescribed etchant. The etching operation is stopped at an undoped GaAs layer in the layer 11; a buried layer 13 can be formed by a regrowth operation using a liquid phase epitaxy (LPE) method. Thereby, it is possible to obtain a laser of a two-dimensional heterostructure type whose element cap be formed easily and whose light-emitting efficiency is good. |
| 公开日期 | 1991-05-22 |
| 申请日期 | 1989-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64588]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | NOJIRI HIDEAKI. Buried heterostructure semiconductor laser device and manufacture thereof. JP1991119777A. 1991-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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