Tunable surface emitting semiconductor laser
文献类型：专利
| 作者 | DUTTA, NILOY KUMAR; VAKHSHOORI, DARYOOSH |
| 发表日期 | 1994-09-07 |
| 专利号 | EP0614256A1 |
| 著作权人 | AT&T CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Tunable surface emitting semiconductor laser |
| 英文摘要 | The disclosed tunable (wavelength and/or focal length) laser typically is a surface emitting laser that comprises a multilayer structure that comprises the lower Bragg reflector (11) and the active region (13). A layer of electro-optic material (199) (typically liquid crystal material) is in contact with the top surface of the multilayer structure, and means (193, 195) are provided for applying a voltage across the layer of electro-optic material. In one exemplary embodiment, the layer (199) is inside the laser cavity, making the laser wavelength tunable. In another exemplary embodiment the laser is a Z-laser that focuses the output radiation, with the multilayer structure comprising also the upper Bragg reflector. In this embodiment the layer of electro-optic material is outside the laser cavity, and the laser has tunable focal length. A still further embodiment is both wavelength- and focal length-tunable. Lasers according to the invention can be advantageously used in a variety of applications, e.g., in a wavelength division multiplexed and/or optically amplified optical fiber communication system. |
| 公开日期 | 1994-09-07 |
| 申请日期 | 1994-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64590]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | DUTTA, NILOY KUMAR,VAKHSHOORI, DARYOOSH. Tunable surface emitting semiconductor laser. EP0614256A1. 1994-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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