Vertically emitting laser and method of making the same
文献类型：专利
| 作者 | UNGAR, JEFFREY E.; OSOWSKI, MARK L. |
| 发表日期 | 2008-08-21 |
| 专利号 | US20080198890A1 |
| 著作权人 | LASER OPERATIONS LLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertically emitting laser and method of making the same |
| 英文摘要 | Diode lasers comprise a substrate and a number of material layers disposed thereon that include a P-type material layer, and an N-type material layer. A gain layer and diffraction grating feedback layer can be also be included in the material layers. The material layers are formed by epitaxial deposition, during which process a wall surface common to the material layers is also formed. This wall surface forms an internally reflective wall surface within the material layers that is oriented to reflect a laser beam internally within the diode laser construction towards a top or bottom surface of the diode laser for emission therefrom. In an preferred embodiment, the internally reflective wall surface is oriented at a 45 degree angle, and the laser beam is reflected by the wall surface to emit the laser beam from the diode laser at a 90 degree angle relative to the top or bottom surface. |
| 公开日期 | 2008-08-21 |
| 申请日期 | 2007-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64592]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LASER OPERATIONS LLC |
| 推荐引用方式 GB/T 7714 | UNGAR, JEFFREY E.,OSOWSKI, MARK L.. Vertically emitting laser and method of making the same. US20080198890A1. 2008-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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