Vapor phase epitaxial growth equipment
文献类型：专利
| 作者 | NODA YUKIO; KUSHIRO YUKITOSHI |
| 发表日期 | 1986-05-29 |
| 专利号 | JP1986111518A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor phase epitaxial growth equipment |
| 英文摘要 | PURPOSE:To enable growth of a binary chemical compound semiconductor layer having alignment of its lattices without introduction of lowering of working efficiency, and of deterioration in its characteristics by providing a freely opened and closed lid at an outlet of at least one source tube of two source tubes. CONSTITUTION:A lid 20 freely opened and closed is provided at an outlet of a Ga source tube 5 in a first growth room 3 and a tip of a lid control rod 19 composed of quartz or the like mounted on a substrate holder 2 is contacted to the head of the lid 20. A similar lid 21 is provided at an outlet of a Ca source tube 10 in a second growth room 4 so as to allow a tip of the lid control rod 19 to be contacted to the head of the lid 21 when a substrate 1 is moved into the second growth room 4. when a first layer of InGaAsP is grown in the first growth room 3, the substrate holder 2 is moved to such a position where the lid control rod 19 does not contact the lid 20. Even when the lid 20 is closed, the lid, 20 is brought into an open state by the pressure of GaCl gas flowing from the Ga source tube. Accordingly, the first layer of InGaAsP is made to grow on the substrate 1 by gas of a fixed amount of flow rate from each source tube. |
| 公开日期 | 1986-05-29 |
| 申请日期 | 1984-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64596]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | NODA YUKIO,KUSHIRO YUKITOSHI. Vapor phase epitaxial growth equipment. JP1986111518A. 1986-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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