Liquid-phase epitaxy apparatus
文献类型：专利
| 作者 | KUME ICHIRO; HIRONAKA MISAO; OOTA YOICHIRO |
| 发表日期 | 1987-06-27 |
| 专利号 | JP1987144321A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase epitaxy apparatus |
| 英文摘要 | PURPOSE:To reduce dispersion in composition of an epitaxial layer, in manufacturing a semiconductor element having a double heterostructure, by providing a slanted bottom part of a holder, which is located directly beneath an injecting port, so that used solution does not remain. CONSTITUTION:A boat is placed in the reacting of a liquid epitaxy apparatus. Temperature is increased to 700-800 deg.C in a hydrogen atmosphere. Then the temperature is kept for a specified time period. Thereafter, the boat is slowly cooled at a constant temperature decreasing speed. When the temperature is decreased to a growth starting temperature, a solution well 71 and the like are moved to the direction of an arrow (m) by one cell. At this time, a piston 42 on the solution 62 is pushed down with a tunnel 5. The solution 62 is injected to a gap formed with a substrate wafer 2 from an injecting port 9. The injected solution 62 is moved leftward in the Figure between the substrate wafer 2 and the container wall. Then the solution falls through a hole 93 at the left end and flows into a waste liquid well 8. Since a bottom part 92 of a lower holder beneath the injecting port 9 is slanted, the used solution does not remain. |
| 公开日期 | 1987-06-27 |
| 申请日期 | 1985-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUME ICHIRO,HIRONAKA MISAO,OOTA YOICHIRO. Liquid-phase epitaxy apparatus. JP1987144321A. 1987-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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