Coupling method for optical waveguide
文献类型：专利
| 作者 | NAKAMURA HITOSHI; MOROSAWA KENICHI; MATSUMURA HIROYOSHI |
| 发表日期 | 1988-05-13 |
| 专利号 | JP1988108305A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Coupling method for optical waveguide |
| 英文摘要 | PURPOSE:To improve coupling efficiency between a semiconductor laser and an optical waveguide by forming the optical waveguide with multilayer structure to be selectively etched and etching a waveguide layer up to the depth of a clad layer. CONSTITUTION:A multilayer structure for a laser consisting of a waveguide layer 2, an active layer 3, a clad layer 4, and a cap layer 5 is formed on a substrate 1 having a diffraction grating. The waveguide layer 2 and the active layer 3 are selectively etched in the cavity direction of a laser so as to be deeper than the clad layer 4. An optical waveguide layer 7, a clad layer 8 and a cap layer 9 are formed on the substrate 1 by epitaxial growth. Consequently, the active layer 3 of a semiconductor laser is extremely smoothly coupled with the waveguide layer 7 of the optical waveguide and its high coupling efficiency can be obtained. |
| 公开日期 | 1988-05-13 |
| 申请日期 | 1986-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64631]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKAMURA HITOSHI,MOROSAWA KENICHI,MATSUMURA HIROYOSHI. Coupling method for optical waveguide. JP1988108305A. 1988-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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