Semiconductor diode laser and method of manufacturing such a laser
文献类型：专利
| 作者 | OPSCHOOR, JAN; AMBROSIUS, HUBERTUS PETRUS MECHTILDUS MARIA |
| 发表日期 | 1991-06-19 |
| 专利号 | EP0432843A1 |
| 著作权人 | PHILIPS ELECTRONICS N.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor diode laser and method of manufacturing such a laser |
| 英文摘要 | Semiconductor diode lasers of the so-called NAM (= Non-Absorbing Mirror) type are used due to the high emanating power as writing (and reading) lasers in optical recording systems. The known lasers of this type comprise both in the active region (13') and in the mirror region (17, 19) a cladding layer (1), which fills a groove and is provided on an absorbing layer (9) (17, 19). The fundamental lateral mode is favoured in both regions ((13'), (17, 19)) by absorption of part of the radiation produced. Due to the absorption in the mirror region (17, 19), mirror degradation occurs, which limits the maximum power and the life of the laser. A semiconductor diode laser according to the invention comprises in the mirror region (17, 19) a first cladding layer (1'), a radiation-guiding layer (2') and a third cladding layer (6). In the radiation-guiding layer (2'), a radiation guide (15) is formed by means of means (12) arranged in the radiation-guiding layer (2'), by which a step is formed in the effective refractive index. Further, the layers (1', 2', 6), which are located in the amplification profile of the radiation guide (15), have a larger band gap than the active layer (3). Due to the measures according to the invention, no absorption of radiation occurs in the mirror region (17, 19). As a result, the occurrence of mirror degradation is limited so that lasers are obtained having a high power available and a long life. The means (12) consist, for example, in a reduced thickness or a variation of the composition of the radiation-guiding layer (2') on either side of the radiation guide (15) caused by doping. Lateral mode stabilization in the mirror region (17, 19) is obtained by choosing a sufficiently small step in the effective refractive index. The invention is also advantageous for lasers of the NAM-LOC type (LOC = Large Optical Cavity). A method according to the invention has the advantage that a semiconductor diode laser is obtained having the desired properties and that no other growing technique than MOVPE is required (see Fig. 1). |
| 公开日期 | 1991-06-19 |
| 申请日期 | 1990-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64635]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS N.V. |
| 推荐引用方式 GB/T 7714 | OPSCHOOR, JAN,AMBROSIUS, HUBERTUS PETRUS MECHTILDUS MARIA. Semiconductor diode laser and method of manufacturing such a laser. EP0432843A1. 1991-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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