Semiconductor laser device and method for manufacturing the same semiconductor laser device
文献类型：专利
| 作者 | WATATANI, CHIKARA |
| 发表日期 | 2007-04-26 |
| 专利号 | US20070091957A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same semiconductor laser device |
| 英文摘要 | A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer is covered with the p-type InP buried layer and the p-type InP current blocking layer. The n-type InP current blocking layer is prevented from contacting n-type and p-type InP cladding layers. Creation of an ineffective current path from one of the n-type InP cladding layers through the n-type InP current blocking layer to a p-type InP cladding layer of the semiconductor laser is prevented. |
| 公开日期 | 2007-04-26 |
| 申请日期 | 2006-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64640]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | WATATANI, CHIKARA. Semiconductor laser device and method for manufacturing the same semiconductor laser device. US20070091957A1. 2007-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。