Semiconductor Laser with gamma and X electron barriers
文献类型：专利
| 作者 | STEPHEN PETER NAJDA |
| 发表日期 | 2000-06-21 |
| 专利号 | GB2344932A |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor Laser with gamma and X electron barriers |
| 英文摘要 | A separate confinement hetero structure laser device has an optical guiding region 10 and a p-doped cladding layer 11 . An electron-reflecting barrier 14 is disposed at the p-side of the device, for example at the interface between the optical guiding region 10 and the cladding region 1 The electron-reflecting barrier 14 has a first electron-reflecting layer 12 for reflecting Q -electrons and a second electron-reflecting layer 13 for reflecting X-electrons. The electron-reflecting layers can be strained semiconductor layers. A strain balanced electron-reflecting barrier is formed if one of the electron-reflecting layers 12 is in tensile strain and the other electron-reflecting layer 13 is in compressive strain. In another feature of the invention, only a single electron-reflecting layer 12 is provided. A reduction in the leakage of X-electrons is obtained by making the X-band of the electron-reflecting layer 12 degenerate with the Q -band of the optical guiding region 10. The laser may be fabricated in the AlGaInP material system, where the barrier for Q electrons comprises AlP or GaP and the barrier for X electrons comprises InP. |
| 公开日期 | 2000-06-21 |
| 申请日期 | 1998-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64642]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | STEPHEN PETER NAJDA. Semiconductor Laser with gamma and X electron barriers. GB2344932A. 2000-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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