Semiconductor laser and method of manufacturing the semiconductor laser
文献类型：专利
| 作者 | HAYAFUJI, NORIO, C/O MITSUBISHI DENKI K.K.; MOTODA, TAKASHI, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1996-11-13 |
| 专利号 | EP0742617A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method of manufacturing the semiconductor laser |
| 英文摘要 | A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate. A method of making a semiconductor laser according to the invention includes successively growing on a surface of a compound semiconductor substrate having a first crystalline orientation a first cladding layer, an active layer, and a second cladding layer; etching the grown crystalline layers in the grooves in a first protective layer using a first etchant that very slowly etches the grown layers on a surface perpendicular to the first crystalline orientation; isotropically etching the grown layers not covered by a second protective layer and, subsequently, with the first etchant to produce a second surface perpendicular to the first crystalline orientation; and, after removing the first and second protective layers, growing a doped crystalline window layer covering at least one of the surfaces perpendicular to the first crystalline orientation. |
| 公开日期 | 1996-11-13 |
| 申请日期 | 1996-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64647]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HAYAFUJI, NORIO, C/O MITSUBISHI DENKI K.K.,MOTODA, TAKASHI, C/O MITSUBISHI DENKI K.K.. Semiconductor laser and method of manufacturing the semiconductor laser. EP0742617A1. 1996-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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