Manufacture of semiconductor diffraction grating
文献类型：专利
| 作者 | BAN YUZABURO; TSUJII HIRAAKI |
| 发表日期 | 1988-11-09 |
| 专利号 | JP1988271990A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor diffraction grating |
| 英文摘要 | PURPOSE:To improve the diffraction efficiency by forming a semiconductor layer on a substrate by epitaxial growth while irradiating a laser two-beam interference light on the surface of the substrate. CONSTITUTION:While irradiating two interference beams of laser light on the surface of a substrate, a normal epitaxial growth is performed, for example, a crystal growth by an organic metal vapor technique. When the two interference beams of laser is irradiated, the laser beams are irradiated alternately in cycles on the substrate and the laser beams permit the epitaxial layer where regions having different compositions, conductivity types, and carrier concentrations are formed alternately in cycles to grow. In this way, as the regions having the different compositions, conductivity types, and carrier concentrations are formed under the action of the light, an interface between laser irradiation and irradiationless parts is so steep that its diffraction efficiency becomes higher than conventional ones. |
| 公开日期 | 1988-11-09 |
| 申请日期 | 1987-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | BAN YUZABURO,TSUJII HIRAAKI. Manufacture of semiconductor diffraction grating. JP1988271990A. 1988-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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