Optical semiconductor device and fabrication thereof
文献类型：专利
| 作者 | SAITO YASUHIRO; SUDO HISAO; SODA HARUHISA |
| 发表日期 | 1992-10-15 |
| 专利号 | JP1992291781A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device and fabrication thereof |
| 英文摘要 | PURPOSE:To prevent current leak at electrode isolating sections between a plurality of electrodes by removing a contact layer to expose a clad layer and then forming a polyimide layer. CONSTITUTION:The optical semiconductor device is constituted of an absorption layer 8 and a clad layer 10 in stripe structure, and a high resistance buried layer 12 on the side face thereof. An optical modulator section electrode 14 and a laser section electrode are provided to be connected through a contact layer 11 with the clad layer 10. A polyimide layer 20 is formed between the optical modulator section electrode 14, the laser section electrode and the high resistance buried layer 12. The polyimide layer 20 is also formed at an electrode isolating part between the optical modulator electrode 14 and the laser section electrode. The polyimide layer 20 has substantially vertical side face above the border between the clad layer 10 and the high resistance buried layer 12 and has inclining side face at other parts. According to the constitution, current leak is prevented at electrode isolating parts between a plurality of electrodes. |
| 公开日期 | 1992-10-15 |
| 申请日期 | 1991-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SAITO YASUHIRO,SUDO HISAO,SODA HARUHISA. Optical semiconductor device and fabrication thereof. JP1992291781A. 1992-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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