Semiconductor laser device and beam separating device
文献类型:专利
作者 | KAGAWA HITOSHI; HATTORI AKIRA |
发表日期 | 1990-04-16 |
专利号 | JP1990102591A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device and beam separating device |
英文摘要 | PURPOSE:To independently control beam outputs projected from light emitting points of a semiconductor laser device provided with two or more light emitting points by a method wherein a beam separator provided with a semiconductor substrate and a waveguide layer formed of semiconductor and a semiconductor laser chip are provided to the same heat sink. CONSTITUTION:A semiconductor light emitting element 1 provided with two or more light emitting points 2 and 3 and a beam separating device, which separates two or more beams from each other applying a semiconductor crystal to a waveguide 4, are integrated into a hybrid on the same heat sink 9, where the semiconductor crystal whose band gap is broader than the energy corresponding to the wavelength of objective beams is made to grow for instance on a stbstrate 8. And, beams 6 and 7 projected from the light emitting points 2 and 3 are separated by the beam separator. By this setup, the outputs of beams projected from planes of a semiconductor laser resonator opposed to the light emitting points 2 and 3 can be controlled independent of each other. |
公开日期 | 1990-04-16 |
申请日期 | 1988-10-12 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/64652] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,HATTORI AKIRA. Semiconductor laser device and beam separating device. JP1990102591A. 1990-04-16. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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