Nitride semiconductor laser device and manufacturing method thereof
文献类型：专利
| 作者 | OHNO, HIROSHI |
| 发表日期 | 2006-07-27 |
| 专利号 | US20060165143A1 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor laser device and manufacturing method thereof |
| 英文摘要 | In the fields of semiconductor laser devices made of nitride semiconductor layers, the present invention provides a semiconductor laser device having higher output and longer lifetime characteristics and a manufacturing method thereof. The semiconductor laser device according to the present invention includes a resonator that has: the first cladding layer which is made of n-type GaN or n-type AlGaN; an active layer which is made of an AlGaInN multiple quantum well and positioned above the first cladding layer; the second cladding layer which is made of p-type or undoped GaN, or p-type or undoped AlGaN and positioned above the active layer; and the third cladding layer which is made of p-type GaN or p-type AlGaN and positioned above the second cladding layer. The resonator also has an ion implanted part at an end part of the resonator. |
| 公开日期 | 2006-07-27 |
| 申请日期 | 2006-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | OHNO, HIROSHI. Nitride semiconductor laser device and manufacturing method thereof. US20060165143A1. 2006-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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