Manufacture of quantum thin wire or quantum box
文献类型：专利
| 作者 | MURAKAMI HIDEKAZU; ETO HIROYUKI; NAKAGAWA KIYOKAZU; NAKAMURA NOBUO; OSHIMA TAKU; MIYAO MASANOBU |
| 发表日期 | 1991-08-12 |
| 专利号 | JP1991184380A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of quantum thin wire or quantum box |
| 英文摘要 | PURPOSE:To obtain a method for forming a facet quantum thin wire and a quantum box having improved controllability over a wide application range of materials by growing single crystal through solid phase epitaxy on a base having an insulation film pattern. CONSTITUTION:An amorphous semiconductor thin film 4 is deposited on a semiconductor substrate 1 with an insulation film 2 which is machined in a pattern and it is turned into single crystal by the solid phase epitaxial growth. For example, the amorphous insulation film 2 is formed on the single-crystal substrate 1, a thin-line or square-shaped opening 3 is provided, and then the amorphous semiconductor film 4 is deposited. Then, heat treatment is made and then the amorphous film 4 is turned into single crystal by the solid phase epitaxial growth with an opening as a seed crystal. In that case, if the face of the single-crystal substrate 1 is set to {100} face and the orientation of a side of the opening 3 is selected in the direction of , a {111} facet 5 appears at the front of crystal growth. Then, by performing selective etching elimination of an amorphous part 6 or a part 7 with a large amount of crystal defect, thin-line or box-shaped machining becomes possible. |
| 公开日期 | 1991-08-12 |
| 申请日期 | 1989-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64655]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MURAKAMI HIDEKAZU,ETO HIROYUKI,NAKAGAWA KIYOKAZU,et al. Manufacture of quantum thin wire or quantum box. JP1991184380A. 1991-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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