Formation of diffraction grating and distributed feedback type semiconductor laser
文献类型：专利
| 作者 | TAKENAKA NAOKI; SHIBATA ATSUSHI |
| 发表日期 | 1990-05-22 |
| 专利号 | JP1990132873A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of diffraction grating and distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a phase shifting diffraction grating which is uniform throughout the whole face and excellent in reproducibility by a method wherein a surface flattened layer is formed as a first layer on a semiconductor substrate or an epitaxial growth layer on a semiconductor substrate. CONSTITUTION:Polyimide 2 is applied onto an InP substrate 1, Si 3 is evaporated thereon, positive type photoresist 4 is applied to form a resist pattern 4A, and the Si 3 is etched using the resist pattern 4A as a mask to form an Si pattern 3A. Then, the polyimide 2 is etched using a part of the Si pattern 3A as a mask to obtain a polyimide pattern 2A. In succession, the etched part of the polyimide 2 is covered with an SiO2 protective film 6, then the rest part if obliquely etched, the protective film 6 is removed, and then the InP substrate 1 is etched using the polyimide pattern 2A as a mask to form a phase shifting diffraction grating 100. |
| 公开日期 | 1990-05-22 |
| 申请日期 | 1988-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKENAKA NAOKI,SHIBATA ATSUSHI. Formation of diffraction grating and distributed feedback type semiconductor laser. JP1990132873A. 1990-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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