Manufacture of compound semiconductor device
文献类型：专利
| 作者 | TAMURA HIDEO; KURIHARA HARUKI; ITO HIROSHI; FURUKAWA CHISATO |
| 发表日期 | 1987-11-02 |
| 专利号 | JP1987252186A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of compound semiconductor device |
| 英文摘要 | PURPOSE:To reduce a thermal resistance from a semiconductor element to a heat sink and to readily raise the accuracy of the mounting position of the element by using an Si layer deposited in advance on the element securing surface or the sink securing surface as a preform of an eutectic layer. CONSTITUTION:A GaAlAs semiconductor laser element is composed of an Au-Zn alloy electrode 23, a P-type GaAs substrate 25, an N-type GaAs current blocking layer 27, a P-type AlGaAs clad layer 29, a P-type AlGaAs active layer 31, an N-type AlGaAs clad layer 33, an N-type GaAs contact layer 35, an Au-Ge alloy electrode 37, and a current and light confinement groove 39. Si 41 is formed on the electrode 37, and an Au 43 is formed on an Si surface oxide prevention further thereon. A semiconductor laser chip is contacted with a Cu-heat sink 47 plated with Au 45, heated to Au-Si eutectic point in high purity N2 atmosphere, and cooled. |
| 公开日期 | 1987-11-02 |
| 申请日期 | 1986-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64660]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,KURIHARA HARUKI,ITO HIROSHI,et al. Manufacture of compound semiconductor device. JP1987252186A. 1987-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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