Self-pulsation type semiconductor laser device
文献类型：专利
| 作者 | KAN, YASUO; TANI, KENTARO; TAKEOKA, TADASHI; SUGAHARA, AKIYOSHI |
| 发表日期 | 1997-07-02 |
| 专利号 | EP0782230A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Self-pulsation type semiconductor laser device |
| 英文摘要 | A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semiconductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer. |
| 公开日期 | 1997-07-02 |
| 申请日期 | 1996-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64661]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAN, YASUO,TANI, KENTARO,TAKEOKA, TADASHI,et al. Self-pulsation type semiconductor laser device. EP0782230A1. 1997-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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