Manufacture of compound semiconductor element
文献类型：专利
| 作者 | NISHIBE TORU; TAKAHASHI SHIGEKI |
| 发表日期 | 1991-07-25 |
| 专利号 | JP1991171729A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of compound semiconductor element |
| 英文摘要 | PURPOSE:To process it without the marginal part chipping thereby obtaining a compound semiconductor element of the same size as the substrate before the crystal growth by selectively removing the swelling part of the peripheral part of a compound semiconductor substrate by photoetching method. CONSTITUTION:A diffraction grating is made on an InP substrate 11 for distribution feedback type layer, and thereon an InGaAsP beam guide layer 12, an active layer 13, an InP clad layer 14, and an InGaAsP cap layer 15 are grown in order by organic metal vapor growth method. The peripheral part of the substrate was 5mum thick or more as compared with total 2.2mum thick in the center. The peripheral part is removed selectively in the order of the cap layer, the clad layer, the active layer, and the light guide layer, using a resist mask by surfuric etchant. The uniformity of the thickness becomes within + or -2% excepting 5mm from the peripheral part. And to form a mesa, it is covered with an insulating film 16, and to do photolithography, a resist film 17 is applied on this. |
| 公开日期 | 1991-07-25 |
| 申请日期 | 1989-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64662]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NISHIBE TORU,TAKAHASHI SHIGEKI. Manufacture of compound semiconductor element. JP1991171729A. 1991-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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