Lateral basic mode semiconductor laser diode
文献类型：专利
| 作者 | NAKAMURA HITOSHI; MINAGAWA SHIGEKAZU; ITOU KAZUHIRO |
| 发表日期 | 1985-08-14 |
| 专利号 | JP1985154691A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Lateral basic mode semiconductor laser diode |
| 英文摘要 | PURPOSE:To enable to manufacture a lateral mode control without special steps by controlling the magnitude of cleaved surfaces of reflecting surfaces of a resonator to obtain the lateral basic mode. CONSTITUTION:A Ga0.7Al0.3As clad layer 32, a GaAs active layer 33, and a Ga0.7Al0.3As clad layer 34 are sequentially grown with a GaAs contact layer 35 by a liquid phase epitaxie method on an plane azimuth (511) n type GaAs substrate 31, and an SiO2 film 36 for narrowing a current is formed. Electrode metals are deposited on both side surface of (511) surface. Then, a wafer is cleaved in (011) direction and then (101) direction to manufacture an element. Numeral 37 is an effective resonance region of this element. |
| 公开日期 | 1985-08-14 |
| 申请日期 | 1984-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | NAKAMURA HITOSHI,MINAGAWA SHIGEKAZU,ITOU KAZUHIRO. Lateral basic mode semiconductor laser diode. JP1985154691A. 1985-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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