Algaas laser
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253683A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Algaas laser |
| 英文摘要 | PURPOSE:To improve the reproducibility and laser characteristics by a method wherein a GaAs layer having a thickness less than 100Angstrom is provided so as to touch a diffraction grating and the respective ridges of the diffraction grating are isolated from each other by the GaAs layer. CONSTITUTION:A first conductivity type diffraction grating layer 11 having a thickness less than 100Angstrom is built up on a second conductivity type GaAs regrowth boundary layer 10 built up on a guide layer 4. After the first crystal growth of the diffraction grating layer 11, it is selectively etched by photolithography. The respective ridges of the diffraction grating 5 are isolated from each other by the GaAs layer 10. A current injected from an electrode 8a or an electrode 8b does not flow through regions where the parts of the diffraction grating layer 11 remain but flows through regions where the regrowth layer 10 directly touches a cladding layer 6. The same phenomenon also occurs in an active layer 3. With this constitution, a high performance AlGaAs layer whose reproducibility is high can be obtained. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64667]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Algaas laser. JP1990253683A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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