Distorted quantum well laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; WATANABE KENJI; TAKAMORI TAKESHI |
| 发表日期 | 1992-08-25 |
| 专利号 | JP1992237183A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distorted quantum well laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser where a distorted quantum well large in tolerance to stress induced in a manufacturing process and laser oscilla tion is made to serve as an active layer by a method wherein the active layer is made to grow on a stepped substrate of inverted mesa structure, whereby it grows discontinuous. CONSTITUTION:A distorted quantum well laser is provided with an N-GaAs (100) stepped substrate 11 of inverted mesa structure and an InvGa1-vAs quantum well active layer 15 formed on the stepped substrate 11 through a molecular beam epitaxial growth method, where the active layer 15 is severed through the stepped part of the substrate 11 and in result enhanced in tolerance to stress which acts on it near a light emitting region. |
| 公开日期 | 1992-08-25 |
| 申请日期 | 1991-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64677]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,WATANABE KENJI,TAKAMORI TAKESHI. Distorted quantum well laser. JP1992237183A. 1992-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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