Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers
文献类型：专利
| 作者 | SPECK, JAMES S.; TYAGI, ANURAG; ROMANOV, ALEXEY E.; NAKAMURA, SHUJI; DENBAARS, STEVEN P. |
| 发表日期 | 2012-06-21 |
| 专利号 | WO2012058262A3 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers |
| 英文摘要 | A method for fabricating a semi-polar Ill-nitride substrate for semi-polar III- nitride device layers, comprising providing a vicinal surface of the Ill-nitride substrate, so that growth of relaxed heteroepitaxial Ill-nitride device layers on the vicinal surface compensates for epilayer tilt of the Ill-nitride device layers caused by one or more misfit dislocations at one or more heterointerfaces between the device layers. |
| 公开日期 | 2012-06-21 |
| 申请日期 | 2011-10-26 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64682]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | SPECK, JAMES S.,TYAGI, ANURAG,ROMANOV, ALEXEY E.,et al. Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers. WO2012058262A3. 2012-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。