Manufacture of buried hetero structure semiconductor light emitting element and manufacture thereof
文献类型：专利
| 作者 | MATSUMOTO TAKU |
| 发表日期 | 1989-08-15 |
| 专利号 | JP1989202890A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried hetero structure semiconductor light emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce leakage current by providing a forward mesa structure where an active region is composed of (111) B side along direction and by making a semiconductor buried layer a high resistance layer. CONSTITUTION:A buried hetero structure semiconductor light emitting element is so made that an active region 12 is sandwiched between buried layers 16 whose refractive index is smaller than that of the active region 12 and whose forbidden band width is larger than that of the active region 12. Forward mesa structure where the active region 12 is composed of (111) B side along direction is shaped, and a high resistance layer 16 is buried. More particularly, since a pn-junction part is formed only on the active region part of forward mesa structure, parasitic capacity reduces and high-speed modulation is realized. Further, since a forward mesa side wall part is formed on (111) B side, leakage current reduces extremely and a buried hetero structure semiconductor light emitting element which carries out light emitting at high efficiency can be obtained. |
| 公开日期 | 1989-08-15 |
| 申请日期 | 1988-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64685]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO TAKU. Manufacture of buried hetero structure semiconductor light emitting element and manufacture thereof. JP1989202890A. 1989-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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