Method for manufacturing semiconductor laser device and semiconductor laser device
文献类型：专利
| 作者 | KOBAYASHI, MASAHIDE; KITAMURA, SHOTARO |
| 发表日期 | 2007-03-22 |
| 专利号 | US20070064759A1 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing semiconductor laser device and semiconductor laser device |
| 英文摘要 | An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 μm. |
| 公开日期 | 2007-03-22 |
| 申请日期 | 2006-09-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, MASAHIDE,KITAMURA, SHOTARO. Method for manufacturing semiconductor laser device and semiconductor laser device. US20070064759A1. 2007-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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