Asymmetric optical waveguide structure for reducing loss and enhancing power output in semiconductor lasers
文献类型：专利
| 作者 | MATHUR, ATUL |
| 发表日期 | 2001-12-20 |
| 专利号 | US20010053168A1 |
| 著作权人 | JDS UNIPHASE CORP. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Asymmetric optical waveguide structure for reducing loss and enhancing power output in semiconductor lasers |
| 英文摘要 | A semiconductor laser has a waveguide modifying layer to increase output power. Specifically, the laser includes a p-doped cladding layer adjacent to a first side of an active layer. An n-doped cladding layer is positioned on a second side of the active layer. The waveguide modifying layer is disposed between the n-doped cladding layer and the active layer, where the modifying layer reduces an extent by which an optical mode confined by the active layer extends into the p-doped cladding layer. |
| 公开日期 | 2001-12-20 |
| 申请日期 | 2001-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64692]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORP. |
| 推荐引用方式 GB/T 7714 | MATHUR, ATUL. Asymmetric optical waveguide structure for reducing loss and enhancing power output in semiconductor lasers. US20010053168A1. 2001-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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