Mask for manufacturing process of semiconductor device
文献类型：专利
| 作者 | TADATOMO KAZUYUKI; TANIGUCHI KOICHI; TOYAMA OSAMU; IKUNISHI SHIYOUGO |
| 发表日期 | 1991-04-19 |
| 专利号 | JP1991094482A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Mask for manufacturing process of semiconductor device |
| 英文摘要 | PURPOSE:To shorten the etching and diffusion of a semiconductor and the forming processes of a light reflecting surface and a resonator by laminating dielectric films having at least two kinds of refractive indices so as to have specific values respectively to the emission wavelength of the semiconductor. CONSTITUTION:An N-type AlGaAs clad layer 1, an N-type AlGaAs active layer 2 and a P-type AlGaAs layer 3 are epitaxial-grown successively onto an N-type GaAs substrate B, thus forming multilayer structure having a double- hetero junction. A dielectric film composed of SiO2 is shaped onto the top face of the AlGaAs layer 3 through an electron beam evaporation method, etc., so that lambda/4 holds in the emission wavelength lambda of a semiconductor, and a dielectric film consisting of another material and having another refractive index is formed similarly onto the dielectric film so that lambda/4 holds. The process is repeated only by a specified number, and the dielectric films are laminated, and used as a mask. Accordingly, the mask having not only a shielding function required at the time of subsequent etching and diffusion process but also a function as a semiconductor mirror surface is formed. |
| 公开日期 | 1991-04-19 |
| 申请日期 | 1989-09-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64694]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | TADATOMO KAZUYUKI,TANIGUCHI KOICHI,TOYAMA OSAMU,et al. Mask for manufacturing process of semiconductor device. JP1991094482A. 1991-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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