Manufacture of semiconductor laser diode
文献类型：专利
| 作者 | IMANAKA KOUICHI; HORIKAWA HIDEAKI; KAWAI YOSHIO |
| 发表日期 | 1983-12-21 |
| 专利号 | JP1983219787A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser diode |
| 英文摘要 | PURPOSE:To make current confinement highly accurate and to improve reproducibility of embedded layers, by forming an active layer in clad layers, and selectively etching the layers by two kinds of chemical etchants. CONSTITUTION:An etching stopping layer 11 is formed on a substrate 10. Then, a first clad layer 12, an active layer 13, a second clad layer 14, and an etching mask layer 15 are sequentially grown. A stripe film of resist is attached. A mask by the etching mask layer 15 is formed by an etchant, which etches only the active layer 13. Then, etching is performed to the stopping layer 11 by another etchant, with the mask layer 15 as a mask. Furthermore, embedded layers 16 and 17 are formed, and an electrode 18 is formed. In this constitution, the reproducibility of the embedded layers is improved, and current confining efficiency is improved owing to the embedded layers being made into drum shape. |
| 公开日期 | 1983-12-21 |
| 申请日期 | 1982-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64699]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,HORIKAWA HIDEAKI,KAWAI YOSHIO. Manufacture of semiconductor laser diode. JP1983219787A. 1983-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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