Semiconductor laser element and photoelectronic device into which said laser element is incorporated
文献类型：专利
| 作者 | SAKAKI SHIGEO |
| 发表日期 | 1986-12-23 |
| 专利号 | JP1986292984A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and photoelectronic device into which said laser element is incorporated |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element having high reliability by forming a groove, which is shaped in parallel with the main surface of a substrate on both sides of a resonator and divides a P-N junction, and a passivation film coating the surface of the groove. CONSTITUTION:The surface on the side where a resonator 11 is mounted, the main surface, is flattened. Consequently, when a laser chip 1 is fixed to a mounting plate such as a sub-mount 14 through a cementing body 15 such as solder, the main surface as a fixing surface is flattened, thus preventing the inclined fitting of the laser chip 1, then keeping the position of the resonator 11 constant. A double hetero-junction is divided by grooves 12. Since the grooves 12 are formed through etching, the crystallizability of the surfaces of the grooves are made extremely better than that by rupture the due to scribing, etc. The surface is coated with a passivation film 13. Accordingly, the leakage of currents in the double hetero-junction exposed to the surfaces of the grooves 12 is inhibited, thus preventing the generation of the deterioration of characteristics, then improving reliability. |
| 公开日期 | 1986-12-23 |
| 申请日期 | 1985-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAKAKI SHIGEO. Semiconductor laser element and photoelectronic device into which said laser element is incorporated. JP1986292984A. 1986-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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