Forming method for resist pattern
文献类型：专利
| 作者 | TSUJI SHINJI; OKAI MAKOTO; HATTORI SHINICHI; HIRAO MOTONAO; OISHI AKIO; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-04-18 |
| 专利号 | JP1987084515A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Forming method for resist pattern |
| 英文摘要 | PURPOSE:To obtain a diffraction element whose phase is inverted in the middle, by applying a negative resist and a positive resist separately on the surface of a solid by a liftoff method. CONSTITUTION:An Az positive resist 2 and a spacer 3 formed of spin-on glass are applied on a substrate 1, and after heat treatment is conducted, an AZ positive resist is applied. Next, the resist 4 is patterned. After the spacer 3 is patterned, the exposed portion of the resist 2 and the resist 4 are removed. Then, after a negative resist 5 is applied separately, the spacer 3 is etched, part of the negative resist 5 is lifted off, and thus the coats of the positive resist 2 and the negative resist 5 are provided separately and alternately on the substrate The resists thus prepared are subjected to exposure and development, and thereby a diffraction grating having a phase shift of pi spatially is obtained. |
| 公开日期 | 1987-04-18 |
| 申请日期 | 1985-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64714]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,OKAI MAKOTO,HATTORI SHINICHI,et al. Forming method for resist pattern. JP1987084515A. 1987-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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