Multiwavelength light source semiconductor element
文献类型：专利
| 作者 | YANASE TOMOO |
| 发表日期 | 1989-02-27 |
| 专利号 | JP1989050494A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiwavelength light source semiconductor element |
| 英文摘要 | PURPOSE:To guide laser radiation with small loss by disposing a plurality of light emitting units on the surface of a semiconductor substrate in parallel to the surface of the substrate, and forming an element isolation layer between the units of a high resistance semiconductor layer having a refractive index lower than that of the material of the units. CONSTITUTION:A plurality of stripe-like light emitting units 11, 12 made of different material compositions are disposed in a surface parallel to the surface of a semiconductor substrate 16 on the substrate 16, and an element isolation layer 13 between the units 11 and 12 is formed of a high resistance semiconductor layer having lower refractive indices than those of the materials of the units 11, 12. Accordingly, an electric resistance between the adjacent units 11 and 12 is very large, its leakage current is small due to it, and the refractive indices are lower than those of the units 11, 12. Therefore, the units 11, 12 have waveguide structures. Thus, the emitted light can be efficiently guided. |
| 公开日期 | 1989-02-27 |
| 申请日期 | 1987-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64718]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO. Multiwavelength light source semiconductor element. JP1989050494A. 1989-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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