Formation of edge face of semiconductor laser curved surface resonator
文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1989-03-28 |
| 专利号 | JP1989082688A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of edge face of semiconductor laser curved surface resonator |
| 英文摘要 | PURPOSE:To obtain a curved surface resonator semiconductor laser having a smooth face by forming the end of a plurality of flat faces, and heat treating a photoresist mask of shape having an angle formed by crossing the flat faces under specific conditions. CONSTITUTION:A photoresist mask 15 for forming a curved facelike end face is formed in advance on a semiconductor laser substrate 13 formed of a first AlGaAs clad layer 9 laminated on an N-type GaAs substrate 8, a GaAs active layer 10, a second AlGaAs clad layer 11 and an N-type GaAs cap layer 12. The mask 15 covers an electrode 14 formed insularly. The mask is heated at 120-150 deg.C for 20min-1hour. Then, it is reactive ion beam etched to form a perpendicular groove 2 Thereafter, after the mask 15 is removed by an oxygen ashing method, a rear face electrode 13 is attached, thereby obtaining a curved surface resonator laser. The mask 15 covers an insular electrode 14. The mask is heated at 120-150 deg.C for 20min to 1hr to form a vertical groove 2 After the mask 15 is removed by oxyde asking, a rear electrode 23 is provided to form a curved surface resonator laser. |
| 公开日期 | 1989-03-28 |
| 申请日期 | 1987-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. Formation of edge face of semiconductor laser curved surface resonator. JP1989082688A. 1989-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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