Method for evaluating epitaxial layers and test pattern for process evaluation
文献类型：专利
| 作者 | MIYASHITA, MOTOHARU, C/O MITSUBISHI DENKI K.K.; OGASAWARA, NOBUYOSHI, C/O MITSUBISHI DENKI K.K.; KIMURA, TADASHI, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1995-12-06 |
| 专利号 | EP0632494A3 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for evaluating epitaxial layers and test pattern for process evaluation |
| 英文摘要 | In a method for evaluating thickness of a semiconductor layer (20) epitaxially growing on a main surface of a substrate (1), a plurality of stripe-shaped ridges (12) extending in a prescribed direction are formed on the surface of the substrate, and a semiconductor layer (20) is epitaxially grown on the surface of the substrate including the stripe-shaped ridges while irradiating the stripe-shaped ridges with light (21) and monitoring diffracted light (22,23) from the stripe-shaped ridges to evaluate the thickness of the epitaxially growing semiconductor layer. Therefore, the thickness of the epitaxial layer is evaluated with high precision during the epitaxial growth process. |
| 公开日期 | 1995-12-06 |
| 申请日期 | 1994-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64737]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MIYASHITA, MOTOHARU, C/O MITSUBISHI DENKI K.K.,OGASAWARA, NOBUYOSHI, C/O MITSUBISHI DENKI K.K.,KIMURA, TADASHI, C/O MITSUBISHI DENKI K.K.. Method for evaluating epitaxial layers and test pattern for process evaluation. EP0632494A3. 1995-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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