Manufacture of distribution feedback type semiconductor laser
文献类型：专利
| 作者 | MIKAMI OSAMU; NAKAGOME HIROSHI; SAITOU TADASHI |
| 发表日期 | 1983-11-17 |
| 专利号 | JP1983197788A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distribution feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a distribution feedback type laser with oscillating wave length at designed value subject to favorable yield by a method wherein, after GaInAsP active layer and a guide layer is preliminarily grown, a cyclic structure as a double hetero structure is formed on GaInAsP layer. CONSTITUTION:An N type InP layer 12, no additive layer 13, P type GaInAsP guide layer 14 are liquid epitaxially grown on (001) surface of N type Inp substrate 1 A resist film is interference exposed by means of He-Cd layer and developed to form a mask further etching a layer 14 to form a cyclic structure 15 (period 4,700Angstrom ) with stripes in parallel with the direction of (-110). Next N type InP layer 16 and P type GaInAsP layer 17 are laminated and a current narrowing structure is introduced to complete a distribution feedback type laser. In such a constitution, the cyclic structure provided on GaInAsP layer 14 with less P component resistant to dissociation of P i.e. thermal deteroration will not be destroyed even if the layer 16 is grown at 590-520 deg.C favorably controlling oscillating wave length to obtain the oscillating wave length at designed value. |
| 公开日期 | 1983-11-17 |
| 申请日期 | 1982-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | MIKAMI OSAMU,NAKAGOME HIROSHI,SAITOU TADASHI. Manufacture of distribution feedback type semiconductor laser. JP1983197788A. 1983-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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