LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
文献类型：专利
| 作者 | CHAKRABORTY, ARPAN; LIN, YOU-DA; NAKAMURA, SHUJI; DENBAARS, STEVEN P. |
| 发表日期 | 2010-12-09 |
| 专利号 | US20100309943A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSTY OF CALIFORNIA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES |
| 英文摘要 | A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer. |
| 公开日期 | 2010-12-09 |
| 申请日期 | 2010-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64745]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSTY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | CHAKRABORTY, ARPAN,LIN, YOU-DA,NAKAMURA, SHUJI,et al. LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES. US20100309943A1. 2010-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。