Light-sensitive semiconductor element
文献类型：专利
| 作者 | OTSUKA KENICHI; ABE YUJI; SUGIMOTO HIROSHI; OISHI TOSHIYUKI; MATSUI TERUHITO |
| 发表日期 | 1989-09-13 |
| 专利号 | JP1989230280A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-sensitive semiconductor element |
| 英文摘要 | PURPOSE:To enable producing a plurality of active waveguiding regions on the same base board easily, by not producing any thick waveguiding layers on the light-emitting region. CONSTITUTION:After the light-emitting region of a laser is made in a thin stripe shape, a light-waveguiding layer is formed on the clad layer around the region to be provided. No thick layers are produced on the active region of the laser. When a forward current flows between electrodes 10 and 8, carriers are injected into an InGaAsP active layer 3, and perform recombination- radiation. If the flowing current exceeds the laser oscillation threshold, the element starts laser-oscillating. When a forward current flows between electrodes 10 and 8, the refractive index of an InGaAsP guide layer 7 changes, and the laser characteristics of the oscillation wavelength and the oscillation intensity change. |
| 公开日期 | 1989-09-13 |
| 申请日期 | 1988-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64746]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA KENICHI,ABE YUJI,SUGIMOTO HIROSHI,et al. Light-sensitive semiconductor element. JP1989230280A. 1989-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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