Liquid phase epitaxial growing method
文献类型：专利
| 作者 | YAMAMOTO KOUSAKU; KAWABATA YOSHIO; NISHIJIMA YOSHITO; FUKUDA HIROKAZU |
| 发表日期 | 1983-08-16 |
| 专利号 | JP1983138037A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growing method |
| 英文摘要 | PURPOSE:To offer a method wherein an over-cooling growth of such an arbitrary temperature difference that the surface of a substrate is not oxidized or formed to unevenness during an epitaxial growth, or that the surface of the crystal layer of a buffer layer of the first layer becomes into a smooth state without showing stepwise differences can be performed, by putting the crsytal layer forming liquid phase of the first layer into a fixed over-cooling state on a support bare in a state that the surface of the substrate for crystal growth is coated with the eighth meltback liquid phase. CONSTITUTION:A liquid reservoir 29 wherein the PbTe liquid phase 32 for meltback is contained is placed still on the substrate 24 only during the decrease of temperature approx. DELTAT, thus the substrate surface is coated, and the liquid reservoir 33 for buffer layer formation is placed on the carbon material of the support base 21 resulting in the over-cooling state of the liquid phase 36 in this liquid reservoir by the fixed temperature DELTAT. Thereafter, further a slide member is moved in the direction D of the arrow mark, and thus the liquid reservoir 33 for buffer layer formation is placed still on the substrate 24 resulting in the formation of a crystal layer of a buffer layer on the substrate 24. |
| 公开日期 | 1983-08-16 |
| 申请日期 | 1982-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64749]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO KOUSAKU,KAWABATA YOSHIO,NISHIJIMA YOSHITO,et al. Liquid phase epitaxial growing method. JP1983138037A. 1983-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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