Ridge waveguide type photo semiconductor device and method for fabricating same
文献类型：专利
| 作者 | MATSUYAMA, TAKAYUKI; TOHYAMA, MASAKI |
| 发表日期 | 2002-08-08 |
| 专利号 | US20020105989A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ridge waveguide type photo semiconductor device and method for fabricating same |
| 英文摘要 | The ridge waveguide type photo semiconductor device includes: a first cladding layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a third cladding layer of the second conductivity type formed on the second cladding layer and being worked so as to have a ridge shape; and an impurity diffusion region formed in the second cladding layer and the active layer on both sides of the ridge-shaped third cladding layer and which has a higher resistance value than that of the second cladding layer below the ridge shape. |
| 公开日期 | 2002-08-08 |
| 申请日期 | 2002-02-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64763]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | MATSUYAMA, TAKAYUKI,TOHYAMA, MASAKI. Ridge waveguide type photo semiconductor device and method for fabricating same. US20020105989A1. 2002-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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