Bistable light emitting device
文献类型：专利
| 作者 | BABA TOSHIO |
| 发表日期 | 1990-10-11 |
| 专利号 | JP1990252283A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bistable light emitting device |
| 英文摘要 | PURPOSE:To enable the high performance design and the high integration to be realized by a method wherein a resonance tunnel diode in asymmetrical structure is formed in a light emitting part so as to perform the bistable operations. CONSTITUTION:A resonance tunnel diode in an asymmetrical structure is formed between an emitter layer 8 and a base layer 12 while a laser diode is formed between an n type layer 3 and a p type clad layer 5. When the space between an anode electrode 7 and a cathode electrode 6 is impressed with proper voltage assuming the laser diode structure as a load series-connected to the resonance tunnel diode, two stabilized points in the high current state with high light emission and the low current state with low light emission exist in the voltage current characteristics. Furthermore, when a base electrode 13 is impressed with a specific pulse voltage, the two states in different intensities of light are brought about. Through these procedures, the bistable operation is realized so that the title light emitting device capable of selecting the light emitting wavelength and facilitating the enhanced performance and the high integration may be manufactured. |
| 公开日期 | 1990-10-11 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | BABA TOSHIO. Bistable light emitting device. JP1990252283A. 1990-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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