Semiconductor optical light emitting device
文献类型：专利
| 作者 | NOZAKI CHIHARU; ISHIKAWA MASAYUKI; UEMATSU YUTAKA |
| 发表日期 | 1991-02-14 |
| 专利号 | JP1991034593A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical light emitting device |
| 英文摘要 | PURPOSE:To improve the lifetime of a p-type clad layer equipped with a double heterostructure by forming a superlattice structure having a regularity in a prescribed direction at a p-type clad layer of the double heterostructure. CONSTITUTION:A double heterojunction-structure consisting of an n-type InGaAlP clad layer 12, an InGaP active layer 13, and a p-type InGaAlP clad layer 14 is formed on an n-type GaAs substrate 1 In and Ga of group III elements are in line in the orientation under a certain condition; besides, they are disposed alternately. A superlattice structure is realized by such an alternate disposition of In and Ga. An n-type GaAs current element layer 15 equipped with a striped opening is formed on the double heterojunction-structure and further, a p-type GaAs contact layer 16 is formed on the layer 15. After that, a semiconductor laser equipped with the double heterostructure is completed by forming p-side and n-side electrodes 17 and 18 with a vapor deposition process and the like. |
| 公开日期 | 1991-02-14 |
| 申请日期 | 1989-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64767]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NOZAKI CHIHARU,ISHIKAWA MASAYUKI,UEMATSU YUTAKA. Semiconductor optical light emitting device. JP1991034593A. 1991-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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