Semiconductor laser using five-element compound semiconductor
文献类型：专利
| 作者 | HATANO, AKO, C/O INTELLECTUAL PROPERTY DIVISION; IZUMIYA, TOSHIHIDE, C/O INTELLECTUAL PROPERTY DIV.; OHBA, YASUO, C/O INTELLECTUAL PROPERTY DIVISION |
| 发表日期 | 1991-09-11 |
| 专利号 | EP0395392A3 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser using five-element compound semiconductor |
| 英文摘要 | A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and GaxAℓ1-xN (0 ≦ x ≦ 1) layers are alternately stacked and each of the GaxAℓ1-xN (0 ≦ x ≦ 1) layers has a zinc blende type crystal structure, or a GaxAℓyB1-x-yNzP1-z (0 ≦ x, y, z ≦ 1) mixed crystal layers with a zinc blende type structure a first clad layer (14) of a first conductivity type, an active layer (15), and a second clad layer (16) of a second conductivity type, together constituting a double heterojunction. |
| 公开日期 | 1991-09-11 |
| 申请日期 | 1990-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64775]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HATANO, AKO, C/O INTELLECTUAL PROPERTY DIVISION,IZUMIYA, TOSHIHIDE, C/O INTELLECTUAL PROPERTY DIV.,OHBA, YASUO, C/O INTELLECTUAL PROPERTY DIVISION. Semiconductor laser using five-element compound semiconductor. EP0395392A3. 1991-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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